Postgraduate research students

Mahmud Hamid Abdelsattar Dwidar

Research title: Thermally Efficient Gallium Nitride Transistors for Future Wireless Communications

Publications

List by: Type | Date

Jump to: 2026 | 2022
Number of items: 4.

2026

Dwidar, Mahmud, Li, Qingxia, Tian, Liang, Shi, Jichun, Cheng, Huihua, Mitchell, Jacob, Ashraf, Huma, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204, Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X and Li, Chong ORCID logoORCID: https://orcid.org/0000-0001-5654-0039 (2026) Experimental and Numerical Investigation on the Effects of the Stress of SiN Passivation on AlGaN/GaN Heterostructures and Their Surface. In: Compound Semiconductor Week (CSW 2026), Kumamoto, Japan, 24-28 May 2026, (Accepted for Publication)

2022

Dhongde, Aniket, Taking, Sanna, Ofiare, Afesomeh, Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Elksne, Maira, Dwidar, Mahmud, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2022) DC and RF Characteristics of Buffer-Free AlGaN/GaN HEMT and MIS-HEMTs Using Si3N4 Passivated Mesa-Sidewall. In: International Conference on Electronic and Photonic Integrated Circuits (EPIC- 2022), Andhra Pradesh, India, 15-17 Dec 2022, (Accepted for Publication)

Dwidar, Mahmud, Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X and Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 (2022) Effect of Annealing Temperature on the Sheet Resistance of AlN/GaN HEMTs. UKNC 2022, 06 Jul 2022.

Dhongde, Aniket, Taking, Sanna, Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Ofiare, Afesomeh, Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Dwidar, Mahmud, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2022) High Performance of AlGaN/GaN HEMTs using Buffer-Free GaN on SiC Structure. 45th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits, Ponta Delgada (São Miguel island – Azores), Portugal, 3-6 May 2022.

This list was generated on Sat Apr 4 00:32:21 2026 BST.
Jump to: Conference or Workshop Item | Conference Proceedings
Number of items: 4.

Conference or Workshop Item

Dwidar, Mahmud, Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X and Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 (2022) Effect of Annealing Temperature on the Sheet Resistance of AlN/GaN HEMTs. UKNC 2022, 06 Jul 2022.

Dhongde, Aniket, Taking, Sanna, Elksne, Maira ORCID logoORCID: https://orcid.org/0000-0003-2999-3520, Ofiare, Afesomeh, Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Dwidar, Mahmud, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2022) High Performance of AlGaN/GaN HEMTs using Buffer-Free GaN on SiC Structure. 45th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits, Ponta Delgada (São Miguel island – Azores), Portugal, 3-6 May 2022.

Conference Proceedings

Dwidar, Mahmud, Li, Qingxia, Tian, Liang, Shi, Jichun, Cheng, Huihua, Mitchell, Jacob, Ashraf, Huma, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204, Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X and Li, Chong ORCID logoORCID: https://orcid.org/0000-0001-5654-0039 (2026) Experimental and Numerical Investigation on the Effects of the Stress of SiN Passivation on AlGaN/GaN Heterostructures and Their Surface. In: Compound Semiconductor Week (CSW 2026), Kumamoto, Japan, 24-28 May 2026, (Accepted for Publication)

Dhongde, Aniket, Taking, Sanna, Ofiare, Afesomeh, Karami, Kaivan ORCID logoORCID: https://orcid.org/0000-0002-7530-2922, Elksne, Maira, Dwidar, Mahmud, Al-Khalidi, Abdullah ORCID logoORCID: https://orcid.org/0000-0003-3739-1204 and Wasige, Edward ORCID logoORCID: https://orcid.org/0000-0001-5014-342X (2022) DC and RF Characteristics of Buffer-Free AlGaN/GaN HEMT and MIS-HEMTs Using Si3N4 Passivated Mesa-Sidewall. In: International Conference on Electronic and Photonic Integrated Circuits (EPIC- 2022), Andhra Pradesh, India, 15-17 Dec 2022, (Accepted for Publication)

This list was generated on Sat Apr 4 00:32:21 2026 BST.

Supervisors